1 rev a.03 d072518 QN3103M6N n-channel 30v fast switching mosfet symbol parameter rating units v ds drain-source voltage 30 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 64 a i d @t c =100 continuous drain current, v gs @ 10v 1 40 a i d @t a =25 continuous drain current, v gs @ 10v 1 14 a i d @t a =70 continuous drain current, v gs @ 10v 1 11 a i dm pulsed drain current 2 128 a eas single pulse avalanche energy 3 51.5 mj i as avalanche current 32.1 a p d @t c =25 total power dissipation 4 41 w p d @t a =25 total power dissipation 4 2.0 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 bvdss rdson (vgs=10v) id (t c =25 ) 30v 6.3m? 64a symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 50 62 /w r jc thermal resistance junction-case 1 3.0 3.9 /w absolute maximum ratings thermal data the QN3103M6N is the highest performance trench n-channel mosfet with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the QN3103M6N meet the rohs and green product requirement with full function reliability approved. advanced high cell density trench technology super low gate charge green device available general description features applications high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga networking dc-dc power system load switch prpak 5x6 pin configuration product summary d s g s s
2 rev a.03 d072518 QN3103M6N n-channel 30v fast switching mosfet symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.01 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =30a --- 5.0 6.3 m ? v gs =4.5v , i d =15a --- 6.9 9.0 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 --- 2.5 v v gs(th) v gs(th) temperature coefficient --- -4.0 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =15a --- 28.1 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.3 --- ? q g total gate charge (10v) v ds =15v , v gs =4.5v , i d =15a --- 15.8 --- nc q g total gate charge (4.5v) --- 8.1 --- q gs gate-source charge --- 2.4 --- q gd gate-drain charge --- 3.3 --- t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 ? i d =15a --- 7 --- ns t r rise time --- 43 --- t d(off) turn-off delay time --- 16 --- t f fall time --- 6 --- c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 838 --- pf c oss output capacitance --- 506 --- c rss reverse transfer capacitance --- 58 --- symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =23a 26.45 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 64 a i sm pulsed source current 2,6 --- --- 128 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v trr reverse recovery time i f =15a , di/dt=100a/s , t j =25 --- 34.9 --- ns qrr reverse recovery charge --- 16.8 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test conditi on is v dd =25v,v gs =10v,l=0.1mh 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics
3 rev a.03 d072518 QN3103M6N n-channel 30v fast switching mosfet typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j fig.3 forward characteristics of reverse fig.4 gate-charge characteristics
4 rev a.03 d072518 QN3103M6N n-channel 30v fast switching mosfet fig.7 drain-source on-state resistance fig.8 transfer characteristics fig.10 safe operating area fig.9 capacitance fig.11 transient thermal impedance
5 rev a.03 d072518 QN3103M6N n-channel 30v fast switching mosfet top marking prpak5x6 package outline drawing
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